Journal: Sensors (Basel, Switzerland)

Article Title: Analytical Optimal Load Calculation of RF Energy Rectifiers Based on a Simplified Rectifying Model †

doi: 10.3390/s21238038

Figure Lengend Snippet: Parameters of two types of Schottky diode that are considered in the simulation.

Article Snippet: In practice, this can be avoided by using a large enough capacitor in the output R-C section based on the applied signal. shows the optimal load calculated by the proposed methods and simulation when using Avago HSMS285x.

Techniques:

Journal: Sensors (Basel, Switzerland)

Article Title: Analytical Optimal Load Calculation of RF Energy Rectifiers Based on a Simplified Rectifying Model †

doi: 10.3390/s21238038

Figure Lengend Snippet: Optimal load calculated by transient simulation (blue), numerical solution of the analytical model (red), and closed-form solutions (yellow and purple) when ( a ) N f = 1 , and ( b ) N f = 4 with Δ f = 1 MHz, simulated with half-wave, 1-, and 2-stages voltage-multipliers using Avago HSMS285x. The results under different frequency bands ( a1 , b1 ) 400 MHz, ( a2 , b2 ) 900 MHz, and ( a3 , b3 ) 2.4 GHz are shown, too.

Article Snippet: In practice, this can be avoided by using a large enough capacitor in the output R-C section based on the applied signal. shows the optimal load calculated by the proposed methods and simulation when using Avago HSMS285x.

Techniques:

Journal: Nanophotonics

Article Title: Detecting terahertz wave by microphone based on the photoacoustic effect in graphene foam

doi: 10.1515/nanoph-2023-0026

Figure Lengend Snippet: Performance of the modulated THz waves. (A) Time-dependent THz power passing through the laser excited silicon wafer when the modulation laser with different power is used; the voltage in the vertical axis is proportional to the THz power which is measured by the Schottky diode detector; (B) dependence of the modulation depth of the THz power on the power of modulation laser. The inset shows the zoom-in plot for low power modulation laser.

Article Snippet: The time-dependent THz power transmitting through the laser-excited silicon wafer is measured by the Schottky diode detector (WR10ZBD, Virginia Diodes Inc.).

Techniques:

Journal: Nanophotonics

Article Title: Detecting terahertz wave by microphone based on the photoacoustic effect in graphene foam

doi: 10.1515/nanoph-2023-0026

Figure Lengend Snippet: Comparison of the representative commercial THz detectors and the detector in this work.

Article Snippet: The time-dependent THz power transmitting through the laser-excited silicon wafer is measured by the Schottky diode detector (WR10ZBD, Virginia Diodes Inc.).

Techniques: Comparison, Sampling

Journal: Nanophotonics

Article Title: Detecting terahertz wave by microphone based on the photoacoustic effect in graphene foam

doi: 10.1515/nanoph-2023-0026

Figure Lengend Snippet: Optoelectronic performances of the typical graphene-based THz detectors.

Article Snippet: The time-dependent THz power transmitting through the laser-excited silicon wafer is measured by the Schottky diode detector (WR10ZBD, Virginia Diodes Inc.).

Techniques: